学术身份

437ccm·必赢国际齐鲁青年学者

学术兼职

国际纳米制造协会（ISNM）会员、国际工程技术促进会（AET）会员、国际期刊Nanomanufacturing and Metrology青年编委，Int J Mech Sci、J Clean Prod、Ceram Int、Mat Sci Semicon Proc等期刊审稿人。

国内外学习和工作经历

2010.09-2014.06，437ccm·必赢国际，机械设计制造及其自动化，工学学士

2014.09-2020.06，437ccm·必赢国际，机械设计及理论，工学博士

2020.09-2023.12，爱尔兰都柏林大学，博士后研究员

2024.01-至今，437ccm·必赢国际，研究员、博士研究生导师

研究领域

（1）半导体材料的磨粒加工技术

（2）半导体材料的原子级制造

参与科研项目情况

[1] Enterprise Ireland，EyeVU - Miniaturised Endoscope Camera Development，2022-2023，参与

[2] 爱尔兰国家科学基金（SFI），Ultra-precision machining in medical device manufacturing（15/RP/B3208），2020-2021，参与

[3] 国家自然科学基金，树脂金刚石线锯锯切硅晶体最小切片厚度研究（No.51775317），2017-2020，参与

[4] 美国国家科学基金（NSF），Diamond wire slicing of crystalline silicon materials with application to manufacturing of high quality solar cell substrates（CMMI No.1538293），2018-2019，参与

近期代表性论文

[1] Wang P, Fang FZ. (2023). Defect-mediated atomic layer etching processes on Cl-Si (100): An atomistic insight. Journal of Physical Chemistry C, 43, 21106-21113.

[2] Wang P, Fang FZ. (2023). Ab initio simulations of ultrashort laser pulse interaction with Cl-Si (100): implications for atomic layer etching. Physical Chemistry Chemical Physics, 25(31), 20871-20879.

[3] Wang P, Castelli M, Fang FZ. (2023). Mechanism of photo-assisted atomic layer etching of chlorinated Si (111) surfaces: Insights from DFT/TDDFT calculations. Materials Science in Semiconductor Processing, 153, 107169

[4] Wang P, Fang FZ. (2022). Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication. Journal of Applied Physics, 132, 144303

[5] Wang P, Wang J, Fang FZ. (2021). Study on mechanisms of photon-induced material removal on silicon at atomic and close-to-atomic scale. Nanomanufacturing and Metrology, 4, 216–225.

[6] Wang P, Wang B, Melkote SN. (2020). Modeling and simulation of phase transformation and crack formation during scribing of mono-crystalline silicon. International Journal of Mechanical Sciences, 175, 105527.

[7] Wang P, Ge P, Ge M, et al. (2019). Material removal mechanism and crack propagation in single scratch and double scratch tests of single-crystal silicon carbide by abrasives on wire saw. Ceramics International, 45(1), 384-393.

[8] Wang P, Ge P, Bi W, et al. (2019). Interaction of lateral cracks in double scratching of single-crystal silicon carbide. Theoretical and Applied Fracture Mechanics, 104, 102378.

[9] Wang P, Ge P, Bi W, et al. (2018). Stress analysis in scratching of anisotropic single-crystal silicon carbide. International Journal of Mechanical Sciences, 141, 1-8.

联系方式

地址：山东省济南市经十路17923号437ccm·必赢国际千佛山校区437ccm·必赢国际

邮编：250061

邮箱：peizhi.wang@sdu.edu.cn